ECE 585 - MOS Device Modeling & Design

Official Description

Techniques for characterizing gate oxide and interface properties and reliability, I-V models for circuit simulation, design for control of short channel effects, silicon-on-insulator, and new device structures. Course Information: Prerequisite: ECE 441.

Prerequisites

Credit in ECE 441

Subject Area

Integrated Circuits and Systems

Course Directors

Description

I-V models for circuit simulation; design for control of short channel effects; new device structures; measurement techniques; emphasis on deep submicron technology.

Goals

To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.

Topics

  • Characterization of MOS Capacitors: C-V and charge pumping measurements, gate current modeling
  • MOSFET I-V Model
  • Short Channel Effects
  • Drain and Channel Engineering, includes hot carrier effects latch-up and breakdown
  • Silicon-on-Insulator MOSFET
  • MOSFET Model for Transient Simulation
  • New device structures and materials

Detailed Description and Outline

To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.

Topics:

  • Characterization of MOS Capacitors: C-V and charge pumping measurements, gate current modeling
  • MOSFET I-V Model
  • Short Channel Effects
  • Drain and Channel Engineering, includes hot carrier effects latch-up and breakdown
  • Silicon-on-Insulator MOSFET
  • MOSFET Model for Transient Simulation
  • New device structures and materials

Texts

Yuan Taur and Tak Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.

Recommended Texts:
E. H. Nicollian and J.R. Brews, MOS(Metal Oxide Semiconductor) Physics and Technology.
J.P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd edition.
Y. Tsividis, Operations and Modeling of the MOS Transistor, 2nd edition

Last updated

2/13/2013