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September 2014

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ECE Special Seminar: Wenjuan Zhu

Speaker Wenjuan Zhu of the IBM T. J. Watson Research Center
Date: 3/18/2014
Time: 11:00 am
Location: CSL Auditorium
Sponsor: ECE ILLINOIS
Event Type: Seminars
  Wenjuan Zhu of the IBM T. J. Watson Research Center, Yorktown Heights, N.Y., will give a special seminar at 11 a.m. Tuesday, March 18, in the CSL Auditorium. The title will be, "Two-dimensional Crystals and Nano-scale Devices." In the last few years, the research community has seen rapidly growing interest in two-dimensional (2-D) crystals and their applications. The electronic properties of these 2-D crystals are diverse - ranging from semi-metals, such as graphene, to semiconductors, such as MoS2, to insulators, such as boron nitride. These 2-D crystals have many unique properties as compared to their bulk counterparts due to their reduced dimensionality and symmetry. A key difference is the band structures, which lead to distinct electronic and photonic properties. The 2-D nature of the materials also plays an important role in defining their exceptional properties of mechanical strength, surface sensitivity, thermal conductivity, tunable band-gap and interaction with light. These unique properties of 2-D crystals open up broad territories of applications in computing, communication, energy, and medicine. In this talk, Zhu will present her work on understanding the electrical properties of graphene and MoS2, in particular current transport and band-gap engineering in graphene, interface between gate dielectrics and graphene, and gap states in MoS2. She will also present work on the nano-scale electronic devices (RF and logic devices) and photonic devices (plasmonic devices and photo-detectors) based on these 2-D crystals. Wenjuan Zhu is a research staff member in the Nanoscience & Nanotechnology Group at the IBM T. J. Watson Research Center. Zhu received her PhD degree in the Department of Electrical Engineering at Yale University in 2003. Her thesis was focused on high-k gate dielectrics for CMOS applications. After graduation, she joined the IBM Semiconductor Research and Development Center. She made key contributions to the 65nm and 32nm CMOS technology nodes. In 2008, she joined the IBM T. J. Watson Research Center and worked on 2-D materials including graphene and layered transition metal dichalcogenides (LTMD). Her research in the past has resulted in 49 publications in journals and conference proceedings, 22 patent applications, and numerous presentations in conferences. Zhu received the Outstanding Technical Achievement Award in IBM, more than 10 Invention Achievement Awards in IBM, the Henry Prentiss Becton Graduate Prize for exceptional achievement in research in Engineering and Applied Science at Yale University, and the IEEE SISC Ed Nicollican Award for Best Student Paper.