ECE 342
Electronic Circuits
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Section  Type  Times  Days  Location  Instructor 

B  LEC  1400  1450  M W F  103 Talbot Laboratory  Chandrasekhar Radhakrishnan 
C  LEC  1100  1150  M W F  112 Chemistry Annex  Jose SchuttAine 
Web Page  http://courses.engr.illinois.edu/ece342/ 

Official Description  Analysis and design of analog and digital electronic circuits using MOS field effect transistors and bipolar junction transistors, with emphasis on amplifiers in integrated circuits. Course Information: Credit is not given for both ECE 342 and PHYS 404. Prerequisite: ECE 210. 
Subject Area  Integrated Circuits and Systems 
Course Prerequisites  Credit in ECE 210 Credit or concurrent registration in ECE 329 
Course Directors 
Elyse Rosenbaum

Detailed Description and Outline 
This course is intended to give juniors in Electrical and Computer Engineering an introduction to the design of analog and digital integrated circuits. Topics:
Credit is not given toward graduate degrees in Electrical and Computer Engineering. 
Computer Usage 
Introduction to SPICE 
Topical Prerequisities 

Texts 
Sedra and Smith, Microelectronic Circuits, 5th ed., Oxford University Press. 
ABET Category 
Engineering Science: 2 credits 
Course Goals 
The goals of this course are as follows: Students will become familiar with the principles of nonlinear circuit design, and sufficiently skilled at analysis of such circuits that they are prepared for advanced courses on integrated circuit design. Students will be able to differentiate between analog (linear) and digital circuits. For a given circuit configuration and DC bias, the students will be able to define gain, input/output resistance, and frequency response. Students will be aware of the nonideal characteristics of bipolar and MOS transistors, and able to make design tradeoffs to achieve a set of conflicting goals. 
Instructional Objectives 
A. By the time of Exam No. 1 (after about 15 lectures), the students should be able to do the following: 1. Use KCL/KVL and mesh/nodal analysis to calculate the voltages and currents in a network consisting of resistors, voltage and current sources, diodes. (a, b, m) 2. Describe the device structure and the IV characteristics of Metal Oxide Semiconductor FieldEffect Transistors (MOSFETs). (a, j) 3. Calculate voltages and currents in a network consisting of resistors, voltage and current sources, and MOSFETS. (as, b, m) 4. Identify the logic function being implemented by a static CMOS logic circuit. (a, m) 5. Calculate the noise margins of a specified CMOS inverter. (a, e, m) 6. Estimate the propagation delay and power consumption of a static CMOS logic gate (a, e, j, m) 7. Design simple, static CMOS logic gates to meet a delay specification (c, m) 8. Use a commercial circuit simulator (e.g., HSPICE) to evaluate the static and transient performance metrics of a CMOS logic gate. Compare the results with those obtained from manual analysis. (j, k) 9. Describe the device structure and the IV characteristics of Bipolar Junction Transistors (BJTs). (a, j) 10. Calculate the voltages and currents in a network consisting of resistors, voltage and current sources, and BJTs. (a, b, m) B. By the time of Exam No.2 (after about 30 lectures), the students should be able to do all of the items listed under A, plus the following: 11. Define the basic characteristics of a generic amplifier such as the input and output impedances, current and voltage gain, and frequency response. (a, e, k, m) 12. Derive the smallsignal (linear) model of a nonlinear component (a, e, k, m) 13. Use the lowfrequency smallsignal model of a MOSFET in circuit analysis and identify the limits of the model. (a, e, j, k, m) 14. Use the lowfrequency smallsignal model of a BJT in circuit analysis and identify the limits of the model. (a, e, j, k, m) 15. Recognize the common source and common emitter amplifiers (including those with source [emitter] degeneration) and be able to calculate gain and input/output impedance. (e, k, m) 16. Apply Miller’s Theorem to estimate the frequency response of a generic amplifier. (e, k) 17. Find the operating frequency band of a particular common emitter or common source amplifier. (e, j, k, m) 18. Use a commercial circuit simulator to perform AC analysis. (k) 19. Derive (or estimate) the transfer function of an amplifier and draw its Bode plot. (a, e, k, m)
C. By the time of the Final Exam (after about 41 lectures), the students should be able to do all of the items listed under A and B, plus the following:
20. Recognize the source follower and emitter follower amplifiers and be able to calculate gain and input/output impedance. (e, k, m) 21. Find the operating frequency band of a particular common emitter or common source amplifier. (e, j, k, m) 22. Design a multistage amplifier to meet gain and bandwidth requirements for a given source and load impedance. (c, e, k, m) 23. Design a simple current source using MOS or bipolar transistors. (c, k) 24. Calculate the gain of a single stage amplifier with active load and identify the advantages of this configuration. (e, m) 22. Recognize a MOS differential amplifier and calculate its gain. Identify its advantages relative to a singleinput amplifier. (e, j, k) 23. Construct a biasing network for an ideal op amp in the inverting or noninverting configuration to achieve a specified gain. (k, m) 24. Identify the gainbandwidth tradeoff associated with feedback networks. (c, k, m) 