ECE 340
Semiconductor Devices
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Section  Type  Times  Days  Location  Instructor 

A  DIS  1000  1050  M W F  106B1 Engineering Hall  Matthew Gilbert 
C  DIS  1100  1150  M W F  335 Mechanical Engineering Bldg  Kyekyoon Kim 
E  DIS  1300  1350  M W F  135 Mechanical Engineering Bldg  John Dallesasse 
X  DIS  1200  1250  M W F  165 Everitt Lab  John Dallesasse 
Web Page  http://courses.engr.illinois.edu/ece340/ 

Official Description  Modern device electronics: semiconductor fundamentals including crystals and energy bands, charge carriers (electrons and holes), doping, and transport, (drift and diffusion); unipolar devices with the MOS field effect transistor as a logic device and circuit considerations; basic concepts of generationrecombination and the PN junction as capacitors and current rectifier with applications in photonics; bipolar transistors as amplifiers and switching threeterminal devices. Course Information: Prerequisite: ECE 210; PHYS 214; credit or concurrent registration in ECE 329. 
Course Prerequisites  Credit in ECE 210 Credit in PHYS 214 Credit or concurrent registration in ECE 329 
Course Directors 
JeanPierre Leburton

Course Goals 
This course is required for both electrical engineering and computer engineering majors. The goals are to give the students an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take followon courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) pn junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field. 
Instructional Objectives 
A. By the time of exam No. 1 (after 17 lectures), the students should be able to do the following: 1. Outline the classification of solids as metals, semiconductors, and insulators and distinguish direct and indirect semiconductors. (a) 2. Determine relative magnitudes of the effective mass of electrons and holes from an E(k) diagram. (a) 3. Calculate the carrier concentration in intrinsic semiconductors. (a, e, k) 4. Apply the FermiDirac distribution function to determine the occupation of electron and hole states in a semiconductor. (a, e, k) 5. Calculate the electron and hole concentrations if the Fermi level is given; determine the Fermi level in a semiconductor if the carrier concentration is given. (a, e, k) 6. Determine the variation of electron and hole mobility in a semiconductor with temperature, impurity concentration, and electrical field. (a, e, k) 7. Apply the concept of compensation and space charge neutrality to calculate the electron and hole concentrations in compensated semiconductor samples. (a, e, k) 8. Determine the current density and resistivity from given carrier densities and mobilites. (a, e, k) 9. Calculate the recombination characteristics and excess carrier concentrations as a function of time for both low level and high level injection conditions in a semiconductor. (a, e, k) 10. Use quasiFermi levels to calculate the nonequilibrium concentrations of electrons and holes in a semiconductor under uniform photoexcitation. (a, e, k) 11. Calculate the drift and diffusion components of electron and hole currents. (a, e, k) 12. Calculate the diffusion coefficients from given values of carrier mobility through the Einstein’s relationship and determine the builtin field in a nonuniformly doped sample. (a, e, k) B. By the time of Exam No.2 (after 32 lectures), the students should be able to do all of the items listed under A, plus the following: 13. Calculate the contact potential of a pn junction. (a, e, k) 14. Estimate the actual carrier concentration in the depletion region of a pn junction in equilibrium. (a, e, k) 15. Calculate the maximum electrical field in a pn junction in equilibrium. (a, e, k) 16. Distinguish between the current conduction mechanisms in forward and reverse biased diodes. (a, e, k) 17. Calculate the minority and majority carrier currents in a forward or reverse biased pn junction diode. (a, e, k) 18. Predict the breakdown voltage of a p+n junction and distinguish whether it is due to avalanche breakdown or Zener tunneling. (a, e, k) 19. Calculate the charge storage delay time in switching pn junction diodes. (a, e, k) 20. Calculate the capacitance of a reverse biased pn junction diode. (a, e, k) 21. Calculate the capacitance of a forward biased pn junction diode. (a, e, k) 22. Predict whether a metalsemiconductor contact will be a rectifying contact or an ohmic contact based on the metal work function and the semiconductor electron affinity and doping. (a, e, k) 23. Calculate the electrical field and potential drop across the neutral regions of wide base, forward biased p+n junction diode. (a, e, k) 24. Calculate the voltage drop across the quasineutral base of a forward biased narrow base p+n junction diode. (a, e, k) 25. Calculate the excess carrier concentrations at the boundaries between the spacecharge region and the neutral n and ptype regions of a pn junction for either forward or reverse bias. (a, e, k) C. By the time of the Final Exam, after 44 class periods, the students should be able to do all of the items listed under A and B, plus the following: 26. Calculate the terminal parameters of a BJT in terms of the material properties and device structure. (a, e, k) 27. Estimate the b of a BJT and rankorder the internal currents which limit the of the transistor. (a, e, k) 28. Determine the rank order of the electrical fields in the different regions of a BJT in forward active bias. (a, e, k) 29. Calculate the threshold voltage of an ideal MOS capacitor. (a, e, j, k) 30. Predict the CV characteristics of an MOS capacitor. (a, e, j, k) 31. Calculate the inversion charge in an MOS capacitor as a function of gate and drain bias voltage. (a, e, j, k) 32. Estimate the drain current of an MOS transistor above threshold for low drain voltage. (a, e, j, k) 33. Estimate the drain current of an MOS transistor at pinchoff. (a, e, j, k) 34. Distinguish whether a MOSFET with a particular structure will operate as an enhancement or depletion mode device. (a, e, j, k) 35. Determine the shortcircuit current and opencircuit voltage for an illuminated p/n junction solar cell. (a, e, j, k) 