MOS Device Modeling & Design
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|D||LEC||1100 - 1220||T R||225A Talbot Laboratory||Elyse Rosenbaum
|Official Description||Techniques for characterizing gate oxide and interface properties and reliability, I-V models for circuit simulation, design for control of short channel effects, silicon-on-insulator, and new device structures. Course Information: Prerequisite: ECE 441.|
|Subject Area||Integrated Circuits and Systems|
|Course Prerequisites||Credit in ECE 441|
|Detailed Description and Outline
To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.
Yuan Taur and Tak Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.
E. H. Nicollian and J.R. Brews, MOS(Metal Oxide Semiconductor) Physics and Technology.
J.P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd edition.
Y. Tsividis, Operations and Modeling of the MOS Transistor, 2nd edition