ECE 441 - Physics and Modeling of Semiconductor Devices

Summer 2009 | Fall 2009 | Spring 2010 | Summer 2010
Web Page http://courses.ece.uiuc.edu/ece441/
Subject Area Microelectronics and Quantum Electronics
Course Prerequisites Credit in ECE 440
Course Directors Jean-Pierre Leburton
Description Advanced concepts in semiconductor electronics with real device structures and limitations of ideal models for device operation. Fundamental device equations, generation-recombination, hot electron effects, performance limitations. Numerical device simulation of PN junction and MOS field effect transistor.
Credit 3 hours
Goals This course is designed to provide undergraduate students with a wide background and the ability to deal with advanced concepts in semiconductor electronic devices.
Topics
  • Review of semiconductor electronics, band model for solids, free carriers statistics, transport in semiconductors, drift mobility, hot electrons, diffusion
  • Fundamental equations for semiconductor devices: current equations, Poisson equation, study cases, continuity equations
  • P-N junctions: potential barriers, quasi-neutrality, static properties, reverse biased junctions, avalanche and Zener breakdowns
  • Current in PN Junctions: Shockley-Hall-Read Model, I-V characteristics, charge storage and transients, numerical simulation of PN Junctions
  • Bipolar transistors: basic properties, transistor action-Gummel number, amplifications, switching
  • Bipolar transistors, limitations and models: Early effect, low and high emitter biases, base resistance, base transit time-charge control model and transients
  • MOS systems: energy band diagram, accumulations, depletion, inversion, capacitance, MOS electronics, threshold voltage, oxide and surface charges
  • MOSFET: basic theories and models, MOSFET parameters, Body effects, transconductance, speed of response, channel-length modulation, MOSFET design, control of the threshold voltage, CMOS, technological evolution
  • MOSFET, Limitations: sub-threshold current velocity saturation, surface mobility, short and narrow channel effects, hot carriers MOSFET breakdown, MOSFET scaling, numerical simulation of MOSFET characteristics
Course Prerequisites ECE 440
Topical Prerequisities
  • Concepts of modern physics
  • Calculus and applications of differential equations
  • Elements of device electronics
Texts R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd ed., Wiley, New York.
ABET Category Engineering Science: 2 credits or 67%
Engineering Design 33%