ECE 444 - IC Device Theory & Fabrication

Summer 2009 | Fall 2009 | Spring 2010 | Summer 2010
Section Type Times Days Location Instructor
AB1 LAB 1400 - 1650 M W   50M Everitt Lab  Dane Sievers
Anoop Rama Damodaran
AB2 LAB 1400 - 1650 T R   50M Everitt Lab  Dane Sievers
Brian Elies
AB3 LAB 1000 - 1250 M W   50M Everitt Lab  Dane Sievers
Valentin Dimitrov
AL1 LEC 0900 - 0950 MTWRF   245 Everitt Lab  Dane Sievers

Web Page http://fabweb.ece.uiuc.edu/
Subject Area Microelectronics and Quantum Electronics
Course Prerequisites Credit in ECE 440
Course Directors James J Coleman
Description Laboratory and lecture course on the physical theory, design, and fabrication of devices suitable for integrated circuitry; includes the electronic properties of semiconductors and techniques (epitaxial growth, oxidation, photolithography diffusion, ion implantation, metallization, characterization) for fabricating integrated circuit devices such as p-n junction diodes, bipolar transistors and field effect transistors.

Preview ECE 444
Credit 4 hours.
Goals The goal of this course is to give advanced undergraduates and beginning graduate students a thorough understanding of the design and process technology of modern integrated circuits. Included are several key aspects including direct hands-on exposure to all aspects of processing technology, experience in the design of semiconductor device processes, and a clear understanding of the economic and technical trade-offs inherent in this industry.
Topics
  • Introduction
  • Process integration
  • Silicon wafer
  • Oxidation
  • Photolithography
  • Etching processes
  • Junction diffusion
  • Diffusion technology
  • Chemical vapor deposition
  • Ion beam processing
  • Backend processes
Computer Usage Design work on diffusion using Excel. Make layout reference with an IBM PC based CAD package. Computer Aided Testing using UNIX workstation. World Wide Web references to - http://www.ece.uiuc.edu/ece344.
Course Prerequisites ECE 440
Topical Prerequisities
  • Semiconductor physics
  • The p-n junction
  • The bipolar junction transistor
  • The metal oxide semiconductor (MOS) transistor
Texts G. E. Anner, Planar Processing Primer (Upclose copies).
ABET Category Engineering Science: 3 credits
Engineering Design: 1 credit