ECE 488
Compound Semiconductors and Devices
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Displaying course information from Spring 2014.
Section  Type  Times  Days  Location  Instructor 

C  LEC  1100  1150  M W F  241 Everitt Lab  Milton Feng 
Web Page  http://courses.engr.illinois.edu/ece488/ 

Official Description  Advanced semiconductor materials and devices; elementary band theory; heterostructures; transport issues; threeterminal devices; twoterminal devices; including lasers and light modulators. Course Information: Prerequisite: ECE 340 and ECE 350. 
Subject Area  Microelectronics and Photonics 
Course Prerequisites  Credit in ECE 340 Credit in ECE 350 
Course Directors 
Milton Feng

Detailed Description and Outline 
Electrical and optical properties of IIIV materials, IIIV devices based on heterostructures including optical waveguides, injection lasers, photodetectors; HEMT and HBT are also covered. Topics:

Topical Prerequisities 

Texts 
Class notes 
ABET Category 
Engineering Science: 75% Engineering Design: 25% 
Course Goals 
The goals of this course are to impart the elements of IIIV compound semiconductor materials and related electronic and photonic devices that constitute the foundation for preparing an electrical engineering major (a) to take advanced physical electronics courses, and (b) to work in wireless communications and photonics industry.

Instructional Objectives 
A. By the time of Midterm Exam (after 19 lectures), the students should be able to do the following: 1. Establish the physical understanding of the basic difference in carrier mobility of elemental and compound semiconductors. (a) 2. Apply Vegard's law coupled with bowing parameters to determine lattice constants and bandgap energies of IIIV ternary and quaternary compound semiconductors. (a), (c), (e) 3. Calculate the directindirect bandgap crossover composition in IIIV ternary and quaternary compound semiconductors. (a), (c), (e) 4. Determine the liquidsolid equilibrium temperature as a function of composition for binary compounds by using phase diagrams. (a) 5. Calculate the energy band discontinuities and alignment at the heterojunction of different semiconductors by using the modelsolid theory. (a), (c), (e), (k) 6. Calculate the critical layer thickness of a strained semiconductor layer by using the Mathews and Blakeslee model. (a), (m) 7. Calculate the conduction and valence bandedge shifts due to compressive stress and tensile stress in a strained quantum well structure. (a) 8. Calculate the equilibrium band diagram, including band discontinuities, depletion width, and bandedge profile, of isotype and anisotype heterojunctions. (a), (c), (e), (k), (m) 9. Calculate the carrier injection rates across a heterojunction under forward and reverse bias conditions. (a), (m) 10. Find the allowed energy levels and the density of states in realistic quantum well structures. (a), (c), (e), (k), (m) 11. Find the allowed energy levels and the density of states in strained quantum well structures. (a), (c), (e), (k), (m) B. By the time of the Final Exam (38 lectures), the student should be able to do all of the items listed under A plus the following: 12. Calculate the allowed energy bands in realistic superlattices by using the modified KronigPenney model. (a), (e), (m) 13. Find the quasiFermi levels in degenerated semiconductors by using FermiDirac integral. (a), (m) 14. Determine the fraction of electrons in various conduction band valleys of nondegenerately doped ntype compound semiconductors. (a), (e) 15. Determine the fraction of holes are light holes and heavy holes in various ptype compound semiconductors. (a), (e) 16. Calculate the allowed energy states and the sheet carrier concentration in a modulation doped heterostructure by using Airy well approach. (a), (c), (e), (k) 17. Develop the ability to design heterojunction FETs by optimizing semiconductor material parameters. (a), (c), (e), (k), (m) 18. Develop the ability to design heterojunction bipolar transistors by optimizing semiconductor material parameters. (a), (c), (e), (k), (m) 19. Establish the physical understanding of the relationships between material susceptibility, complex dielectric constant, absorption coefficient, and index of refraction. (a), (e) 20. Establish the physical understanding of various absorption and emission processes in compound semiconductors. (a), (e) 21. Establish the physical understanding of absorption, spontaneous emission, and stimulated emission rates by using Einstein relations. (a), (e) 22. Design an efficient short wavelength lightemitting diode by properly selecting the material composition from a ternary compound. (a), (c), (e), (k) 23. Design an efficient photodetector by properly selecting the material from compound semiconductors. (a), (c), (e), (k) 24. Design an efficient solar cell by properly selecting the compound semiconductor materials. (a), (c), (e), (k) 25. Determine the transparency carrier density and the transparency current density for a semiconductor laser by examining FermiDirac inversion factor. (a), (c), (e), (k), (m) 26. Find the material gain of a semiconductor laser as a function of injection current. (a), (e), (m) 27. Analyze and extract laser data concerning the internal loss, external quantum efficiency, internal quantum efficiency, output power, and threshold current from experimental results. (a), (c), (e), (k), (m) 28. Design a strained quantum well laser with a specific emission wavelength. (a), (c), (e), (k), (m) 