ECE 585
MOS Device Modeling & Design

Displaying course information from Spring 2014.

Section Type Times Days Location Instructor
D LEC 1100 - 1220 T R   225A Talbot Laboratory  Elyse Rosenbaum
Official Description Techniques for characterizing gate oxide and interface properties and reliability, I-V models for circuit simulation, design for control of short channel effects, silicon-on-insulator, and new device structures. Course Information: Prerequisite: ECE 441.
Subject Area Integrated Circuits and Systems
Course Prerequisites Credit in ECE 441
Course Directors Elyse Rosenbaum
Detailed Description and Outline

To familiarize students with the behavior of deep sub-micron (DSM) CMOS devices, including an understanding of how to design the device to obtain the desired characteristcs, experimental techniques for characterization, and mathematical models to represent the device in a circuit simulation environment.


  • Characterization of MOS Capacitors: C-V and charge pumping measurements, gate current modeling
  • MOSFET I-V Model
  • Short Channel Effects
  • Drain and Channel Engineering, includes hot carrier effects latch-up and breakdown
  • Silicon-on-Insulator MOSFET
  • MOSFET Model for Transient Simulation
  • New device structures and materials
Yuan Taur and Tak Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998.

Recommended Texts:
E. H. Nicollian and J.R. Brews, MOS(Metal Oxide Semiconductor) Physics and Technology.
J.P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd edition.
Y. Tsividis, Operations and Modeling of the MOS Transistor, 2nd edition
Last updated: 2/13/2013