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Improving nanowire transistor linearity with regrowth (Semiconductor Today)
February 5, 2014 -- University of Illinois at Urbana-Champaign has realized junctionless (JL) gallium arsenide (GaAs) nanowire field-effect transistors (NWFETs) "for the first time" by implantation-free source/drain metal-organic chemical vapour deposition (MOCVD) regrowth combined with gate-all-around (GAA) metal sputtering [Yi Song et al, IEEE Electron Device Letters, published online 9 January 2014]. Go to article

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