Faculty
Keh-Yung Cheng
Professor
2112 Micro and Nanotechnology Lab
208 N. Wright Street
Urbana, Illinois 61801
(217) 333-6642
B.S. Electrical Engineering Chung-Cheng Institute of Technology, Taiwan 1969
M.S. Electrical Engineering Stanford University 1972
Ph.D. Electrical Engineering Stanford University 1975
Research Statement:
My current research focuses on 1) the development of ultra-high-speed GaAsSb-based heterojunction bipolar transistors with cutoff frequency near Tera Hz, 2) fundamental studies on fabricating hyper-uniform nanostructures using nano-imprint lithograph and in-situ processing technologies, and 3). exploring III-V alloy-based MOSFET technologies for future integrated circuits applications.
Teaching Statement:
I have been teaching "ECE488- Compound semiconductor and devices" regularly and serving as the course director. During the past two semesters, I have been offering an experimental course equivalent to ECE440 - ECE398NC.
Research Interests:
- Molecular beam epitaxy technology, optoelectronic and high speed devices, in-situ fabrication of nanostructures, and III-V MOSFETs.
Undergraduate Research Opportunities:
Undergraduate research opportunities in areas of compound semiconductor materials and device fabrication are available for students who are looking for challenging topics. Some journal publications done by undergraduate students (*) are listed below:
1. R. H. Chan* and K. Y. Cheng, "Optimization the reactive ion etching of p-InGaP with CH4/H2 by a two-level fractional factorial design process", J. Vac. Sci. and Technol., B14, 3219-3225, 1996
2. J.H. Epple, C. Sanchez*, T. Chung, K.Y. Cheng, and K.C. Hsieh, "Dry etching of GaP with emphasis on selective etching over AlGaP," J. Vac. Sci. and Technol. B20, 2252-2255, 2002.
3. K. Meneou*, H. C. Lin, K. Y. Cheng, J. G. Kim and R. U. Martinelli, "Wet thermal oxidation of AlAsSb alloys lattice matched to GaSb", J. Appl. Phys., 95, 5131-5136, 2004.
Academic Positions
- Professor, Electrical & Computer Engineering, University of Illinois - August 1995 to present (100%)
- Professor, National Tsing Hua University, Taiwan, 1987
- Professor, Chung-Cheng Institute of Technology, Taiwan, 1981-1986
Other Professional Employment
- MTS, Bell Laboratories, Murray Hill, NJ, 1979-1981
Honors, Recognition, and Outstanding Achievements
- 2007 MBE innovator award, September 2007.
- Ministry of Education Distinguish Visiting Chair Professor, National Tsing-Hua University, Hsinchu, Taiwan, 2003-2004
- Fellow of the American Association for the Advancement of Science (AAAS), 2003
- Fellow of IEEE, 2002
- Visiting Research Fellow, Nagoya University, Nagoya, Japan, May-August 2000
- 1985 Distinguished Research Award of the National Science Council, Taiwan, ROC
Honors, Recognition, and Outstanding Achievements for Teaching
- 2009 Engineering Council Award for Excellence in Advising (April 28, 2009)
Journal Articles
- K. Meneou and K.Y. Cheng, ˜Soft Photocurable Nanoimprint Lithography for Compound Semiconductor Nanostructures', J. Vacuum Sci. Technol. B 26, 156 (2008)
- William Snodgrass, Bing-Ruey Wu, K. Y. Cheng, and Milton Feng, 'Type-II GaAsSb/InP DHBTs With Record fT = 670 GHz and Simultaneous fT, fMAX > 400 GH', Proceedings of 2007 International Electron Devices Meeting, Washington DC, December 10-12, 2007
- Chiun-Lung Tsai, K. Y. Cheng, Shu-Ting Chou, Shih-Yen Lin, 'InGaAs quantum wire infrared photodetectors', Appl. Phys. Lett., 91, 181105 (2007)
- K. Meneou, C. L. Tsai, Z. H. Zhang, and K. Y. Cheng, 'Site-controlled InAs Quantum Dots on GaAs Patterned Using Self-Organized Nano-channel Alumina Template', J. Vacuum Sci. Technol. B 23, 1232-1235, 2005.
- H. C. Lin, W. H. Wang, K. C. Hsieh, and K. Y. Cheng, "Fabrication of 1.55 µm VCSELs on Si using metallic bonding," Electronics Letters, vol. 38, pp. 516-517, 2002.
- M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, "Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states," Applied Physics Letters, vol. 76, pp. 312-314, 2000.
- D. E. Wohlert, S. T. Chou, A. C. Chen, K. Y. Cheng, and K. C. Hsieh, "Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures," Applied Physics Letters, vol, 68, p. 6, 1996.
- J. N. Baillargeon, K. Y. Cheng, and A. Y. Cho, "GaInAs/GaAs/GaInP strained quantum well lasers (l~0.98 µm) grown by MBE using solid phosphorus and arsenic valved cracking cells," Applied Physics Letters, vol. 67, p. 2960, 1995.
- X. Liu, S. G. Bishop, J. N. Baillargeon, and K. Y. Cheng, "Band gap bowing in GaP1-xNx alloys," Applied Physics Letters, vol. 63, p. 208, 1993.
- K. Y. Cheng, K. C. Hsieh, and J. N. Baillargeon, "Formation of lateral quantum-well in vertical short-period superlattices by strain induced lateral layer ordering," Applied Physics Letters, vol. 60, p. 2892, 1992.
- J. N. Baillargeon, K. Y. Cheng, G. E. Hofler, and K. C. Hsieh, "Luminescence quenching and the formation of the GaP1-xNx alloy in GaP with increasing nitorgen content," Applied Physics Letters, vol. 60, p. 2540, 1992.
- J. N. Baillargeon, K. Y. Cheng, P. J. Pearah, G. E. Hofler, and K. C. Hsieh, "Growth and liminescence properties of Ga:P and GaP1-xNx," Journal of Vacuum Science Technology, vol. B 10, p. 829, 1992.
- K. Y. Cheng, K. C. Hsieh, J. N. Baillargeon, and A. Mascarenhas, "Formation of lateral quantum-wells in vertical short-period superlattices", Proc. of 1991 Int. Symp. GaAs and related Compounds, (Inst. Phys. Sr. 120), p. 589-594, 1992, Seattle, WA, USA
- C. Y. Chen, A. Y. Cho, K. Y. Cheng, T. P. Pearsall, P. O'Connor, and P. A. Garbinski, "Depletion mode modulation doped A10.48In0.52As-Ga0.47In0.53As heterojunction foeld effect transistors," IEEE Electron Device Letters, vol. EDL-3, p. 152, 1982.
- K. Y. Cheng, A. Y. Cho, T. J. Drummond, and H. Morkoc, "Electron mobilities in moduation doped Ga0.47In0.53As/A10.48In0.52As heterojunctions grown by molecular beam epitaxy," Applied Physics Letters, vol. 40, p. 147, 1982.
- A. Y. Cho and K. Y. Cheng, "Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devices," Applied Physics Letters, vol. 38, p. 360, 1981.
Conferences Organized or Chaired
- Program committee chair of 2008 International Conference on MBE, August 2008, Vancouver, Canada.
- Symposium Organizer, Materials Research Society Spring Meeting, Symposium C: Strained Layer Epitaxy - Materials, Processing, and Device Applications, San Francisco, CA, April 1995
- Conference Chair, 1994 North American Conference on Molecular Beam Epitaxy, October 10, 1994, Urbana, Illinois
Professional Societies
- Advisory board member, North American Conference on MBE, 1995-.
- Treasurer, North American Molecular Beam Epitaxy Conference, 1998-.