Faculty
Milton Feng
Nick Holonyak Jr. Chair in Electrical and Computer Engineering
Professor
404 Coordinated Science Lab, MC-228
1308 W. Main St.
Urbana, Illinois 61801
(217) 333-8080
Ph.D. Electrical Engineering University of Illinois 1979
Research Statement:
The High Speed Device and IC group is aimed at "breakthrough" device and integrated IC and antenna technology toward THz operation. Prof. Feng (With Prof. Holonyak) invented new transistor, Transistor Laser (3 port operation-an electrical input with an electrical output and optical output) in 2004, opened up new frontier in optoelectronics integration as well as fast laser modulation, switching and signal processing.
Teaching Statement:
HIgh Speed Semiconductor Device, Integrated Circuits and Physics
Photonics device and Integrated Circuits
Research Interests:
- High Speed Microelectronics Devices and ICs for Wireless and Optoelectroincs : (1) Optoelectronic IC , (2) Monolithic Microwave and Millimeter-Wave IC, (3) Advanced Analog to Digital IC , (4) RF-MEMS for Wireless Communications, (5) Advanced Si-CMOS Device Physics, (6) Advanced SiGe HBT ICs, (7) Light Emitting Transistor, (8) Transistor Laser (9) III-V MOSFET, (10) THz Device and IC Technology
Undergraduate Research Opportunities:
RF and MIcrowave Device and ICs design
For more information:
High Speed Integrated Circuits Group
Hyper-Uniform Nanophotonic Technologies
Honors, Recognition, and Outstanding Achievements
- Best Student Paper Award, 2009 International Compound Semiconductor MANTECH Symposium
- Center of Advanced Study Associate (2009-2010)
- Transistor laser was the most popular top 10-science story (rank #4) on EurekAlert by America Advanced of Art and Science (AAAS)in 2006
- America Institute of Physics selected "Room Temperature CW Operation of Transistor Laser" as top 5 paper published in the 43 years history of Applied Physics Letter in 2006
- Discover Magazine selected Transistor Laser as top 100 most important discovery in 2005
- Nick Holonyak, Jr. Endowed Chair Professor 2005
- 2004 International Conference on Compound Semiconductor Manufacturing Technology Best Student Paper Award
- 2004 International Electronics and Devices and Materials Symposium Outstanding Paper Award
- Best Sudent Paper Award, 2003 International GaAs MANTECH Symposium
- Fellow, Optical Society of America (OSA) 2003
- Dr. Pan Wen Yuan Foundation Award for High Speed Microelectronics, 2000.(International Award-Taiwan)
- Nick Holonyak, Jr. Professor of Electrical and Computer Engineering, University of Illinois, 2000-2005
- Resident Researcher, Intel, 1999
- Associated Member, Center of Advanced Study, 1998
- IEEE Technical Field Award-David Sarnoff Award 1997
- IEEE/CPMT International Electronic Manufacturing Technology Symposium Best Paper Award-1995
- Arnold Beckman Research Award-1993
- Fellow of IEEE-1992
- Ford Aerospace Corporate Technology Outstanding Principle Investigator Award - 1989
- 4 Times Hughes Division Invention Award 1980 - 1983
- Outstanding Student Award from Electron Material Conference - 1979
Honors, Recognition, and Outstanding Achievements for Teaching
- Anderson Consulting Award for Excellence in Advising College of Engineering -1998
- Anderson Consulting Award for Excellence in Advising College of Engineering -1996
- Anderson Consulting Award for Excellence in Advising College of Engineering -1995
Honors, Recognition, and Outstanding Achievements for Research
- Transistor laser was the most popular top 10-science story (rank #4) on EurekAlert by America Advanced of Art and Science (AAAS)in 2006
- America Institute of Physics selected "Room Temperature CW Operation of Transistor Laser" as top 5 paper published in the 43 years history of Applied Physics Letter in 2006
- Discover Magazine selected Transistor Laser as top 100 most important discovery in 2005
- Associated Member, Center of Advanced Study, 1998
- IEEE David Sarnoff Award 1997
- IEEE/CPMT Best Paper Award 1995
- Fellow of IEEE 1992
- Outstanding Student Award 1979, by AIME
- Hughes Fellow 1973
- Member, Tau Beta Pi
- Member, Eta Kapp Nu
- Member, Sigma Xi
Honors, Recognition, and Outstanding Achievements for Public Service
- Board of Director, Supertex Inc. 2001-Present
- Board of Director, Xindium Technology Inc. 2001-2004
- Resident Researcher, Intel, 1999
Journal Articles
- Yu-Ju Chuang, K. Cimino, M. Stuenkel, W. Snodgrass, and M. Feng, "Radio-Frequency-Noise Characterization and Modeling of Type II InP-GaAsSb DHBT," IEEE Electron Device Letters, vol. 29, No.1, Jan. 21-23, 2008
- D. K. Sengupta, S. L. Jackson, D. Ahmari, H. C. Kuo, J. I. Malin, S. Thomas, M. Feng, G. E. Stillman, Y. C. Chang, L. Li and, H. C. Liu "P-Type InGaAs/InP Quantum Well Infrared Photo-detector with Peak Response at 4.55 um," Appl. Phys. Lett vol. 69 no. 21, 18 Nov 1996.
- M. Feng, C. L. Lau, and C. Ito, "A technique for correction of parasitic capacitance on microwave ft measurements of MESFET and HEMT devices," IEEE-MTT, vol. 39, 11 pp. 1880-1883, Nov. 1991.
- L. J. Guido, K. C. Hsieh, N. Holonyak, Jr., R. W. Kaliski, V. K. Eu, M. Feng, and R. D. Burnham, "Impurity Induced Layer Disordering of Si-implanted AxGa1-xAs-GaAs Quantum Well Hetero-structures-Layer Disordering Via Diffusion from Extrinsic Dislocation Loops," J. of Appl. Phys. vol. 61, pp. 1329-1334, February 1987.
- H. Kanber, M. Feng and J. M. Whelan, "Characterization of Ion Implantation Damage in Capless Annealed GaAs," 1983 MRS Symposium on Ion Implantation, vol. 27, 1984, pp. 365-370, Published by Elsevier Science Publishing Co., Inc.
- M. Feng, V. K. Eu, I. J. D'Haenens, M. Braunstein, "Low Noise GaAs Field Effect Transistor made by Molecular Beam Epitaxy," Appl. Phys. Lett. vol. 41, pp. 633-635, 1982.