Nick and Katherine Holonyak, Jr. Graduate Student Fellowship
Nick Holonyak Jr.
Nick Holonyak Jr. is a John Bardeen Professor of Electrical and Computer Engineering and Physics at the University of Illinois at Urbana-Champaign. A renowned inventor, Holonyak is perhaps best known for developing the first practical light-emitting diode in 1962. Today, these long-lasting, low-heat light sources illuminate everything from alarm clocks to the NASDAQ billboard in New York’s Times Square.
Light-emitting diodes produce more lumens per watt than both incandescent and halogen lighting sources, making them more environmentally friendly and cost effective. The LED’s long life span (about 10 times longer than an incandescent bulb) makes it ideal for use in automotive dashboards and taillights, traffic signals and consumer electronics.
The son of Slavic immigrants who settled in Southern Illinois, Holonyak earned his bachelor’s degree in 1950, his master’s in 1951, and his doctorate in 1954, all in electrical engineering from Illinois. Holonyak was the first graduate student of two-time Nobel laureate John Bardeen, an Illinois professor who invented the transistor. An early researcher in semiconductor electronics, Holonyak gained eminence through his numerous inventions and contributions to advances in semiconductor materials and devices.
Before joining the Illinois faculty in 1963, Holonyak worked for Bell Telephone Labs, where he helped develop silicon-diffused transistor technology. Several years later, while at General Electric, he invented the first practical light-emitting diode and the first semiconductor laser to operate in the visible spectrum. He also developed the first electronic devices in III-V compound semiconductor alloys (III and V referring to places in the periodic table of the elements), and is the inventor of the basic silicon device used in household light-dimmer switches.
At Illinois, Holonyak and his students demonstrated the first quantum-well laser, creating a practical laser for fiber-optic communications, compact disc players, medical diagnosis, surgery, ophthalmology and many other applications.
In the early 1980s, his group introduced impurity-induced layer disordering, which converts layers of a semiconductor structure into an alloy that has important electronic properties. In one use, this discovery solved the problem of a laser’s low reliability. Such lasers exhibit enhanced performance and durability, making them ideal for DVD players and other optical storage equipment.
During the last decade, Holonyak and his students invented a process that enables the formation of high-quality oxide layers on any aluminum-bearing III-V compound semiconductor. The oxide process has had a major impact on vertical-cavity surface emitting lasers, making them practical for such applications as optical and data communications. His current research focuses on light-emitting transistors. Though still in the early stages of development, light-emitting transistors could dramatically improve the speed and availability of electronic communications.
Among Holonyak’s many awards are the Lemelson-MIT Prize for invention (2004), Global Energy Prize from Russia (2003), the Institute of Electrical and Electronics Engineers Medal of Honor (2003), the U.S. National Medal of Technology (2002), the Frederic Ives Medal of the Optical Society of America (2001), the Japan Prize (1995), the National Academy of Sciences’ Award for the Industrial Application of Science (1993), the Optical Society’s Charles Hard Townes Award (1992) and the U.S. National Medal of Science (1990). He is a member of the National Academy of Engineering and of the National Academy of Sciences, and a fellow of the American Academy of Arts and Sciences, the American Physical Society, the IEEE, the Optical Society of America and is a foreign member of the Russian Academy of Sciences. Eight of his 60 doctoral students are members of the National Academy of Engineering. His work has resulted in more than 500 journal papers and 31 patents.
The Nick and Katherine Holonyak, Jr. Graduate Student Award was established in 2002 to recognize a doctoral student who has participated in technological research in semiconductor optoelectronics and the high speed microelectronics area. The award carries a stipend of $5000 plus the recipient’s name is placed on a plaque in Everitt Lab.
Criteria:The awardees are selected using the following criteria:
- The award recipient shall be enrolled in the PhD program of the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign;
- The award recipient shall have successfully passed his or her qualifying examination; and
- The award recipient shall demonstrate excellence in research in the area of semiconductor optoelectronics or high speed microelectronics.
- Applicants must not be graduating before May of the next calendar year.
Applications for the fellowship may be submitted online. The application period will be advertised on My.ECE during the spring semester.
The Department's Fellowship Committee reviews the nomination and makes the selection.
Past Recipients of the Award: